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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1205 DESCRIPTION *With TO-3PN package *High power dissipation APPLICATIONS *For general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -70 -50 -6 -12 -4 100 150 -55~150 UNIT V V V A A W PC Tj Tstg Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ;IB=0 IC=-5A; IB=-0.12A VCB=-70V; IE=0 VEB=-6V; IC=0 IC=-5A ; VCE=-0.5V IE=3A ; VCE=-12V 40 MIN -50 2SA1205 TYP. MAX UNIT V -0.5 -0.1 -0.1 V mA mA 20 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5A;RL=4 IB1=-IB2=-0.12A VCC=-20V 0.60 0.50 0.25 s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1205 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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